Central Semiconductor Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - CEDM8001VL TR CEDM8001VL TR

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 105268-CEDM8001VL TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 100mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-883VL Dimension: SC-101, SOT-883 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 100mA (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 0.66nC @ 4.5V Max Input Capacitance: 45pF @ 3V Maximum Gate-Source Voltage: 10V Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 105268-CEDM8001VL TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 100mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-883VL Dimension: SC-101, SOT-883 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 100mA (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 0.66nC @ 4.5V Max Input Capacitance: 45pF @ 3V Maximum Gate-Source Voltage: 10V Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - CEDM8001VL TR - 105268-CEDM8001VL TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CEDM8001VL TR
105268-CEDM8001VL TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CEDM8001VL TR 105268-CEDM8001VL TR
Manufacturer: Central Semiconductor Corp Win Source Part Number: 105268-CEDM8001VL TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 100mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-883VL Dimension: SC-101, SOT-883 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 100mA (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 0.66nC @ 4.5V Max Input Capacitance: 45pF @ 3V Maximum Gate-Source Voltage: 10V Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 105268-CEDM8001VL TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 100mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-883VL
Dimension: SC-101, SOT-883
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 100mA (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 0.66nC @ 4.5V
Max Input Capacitance: 45pF @ 3V
Maximum Gate-Source Voltage: 10V
Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET 20V P-Ch Enh FET 10Vgs 100mA 100mW

MOSFET 20V P-Ch Enh FET 10Vgs 100mA 100mW

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 105268-CEDM8001VL TR CEDM8001VL TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - CEDM8001VL TR MOSFET
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 100 milliwatts
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