Central Semiconductor Corp. MOSFET CDM3-800 TR13

Description
MOSFET N-Ch 3A 800V PFC FET 11.3nC 3.8Ohm 80W
Description
MOSFET N-Ch 3A 800V PFC FET 11.3nC 3.8Ohm 80W
Datasheet
Datasheet Summary
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The CDM3-800 is a 3.0 A, 800 V N-channel MOSFET in a DPAK package, designed for high-voltage switching applications such as PFC and lighting inverters. It features a typical on-resistance of 3.8 Ω, a total gate charge of 11.3 nC, and a maximum power dissipation of 80 W. The device operates with a junction temperature range of -55 to +150 °C and has a thermal resistance of 1.56 °C/W from junction to case. The pin configuration assigns gate to pin 1, drain to pins 2 and 4, and source to pin 3.

Datasheet Summary
Powered by GS/AI

The CDM3-800 is a 3.0 A, 800 V N-channel MOSFET in a DPAK package, designed for high-voltage switching applications such as PFC and lighting inverters. It features a typical on-resistance of 3.8 Ω, a total gate charge of 11.3 nC, and a maximum power dissipation of 80 W. The device operates with a junction temperature range of -55 to +150 °C and has a thermal resistance of 1.56 °C/W from junction to case. The pin configuration assigns gate to pin 1, drain to pins 2 and 4, and source to pin 3.

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Sheung Wan, Hong Kong
MOSFET N-Ch 3A 800V PFC FET 11.3nC 3.8Ohm 80W

MOSFET N-Ch 3A 800V PFC FET 11.3nC 3.8Ohm 80W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CDM3-800 TR13
Product Name MOSFET
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