Central Semiconductor Corp. MOSFET CDM2208-800FP SL

Description
MOSFET N-Ch 8A 800V PFC FET 24.45nC 1.42Ohm 57W
Description
MOSFET N-Ch 8A 800V PFC FET 24.45nC 1.42Ohm 57W
Datasheet
Datasheet Summary
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The CDM2208-800FP is an N-channel power MOSFET designed for high-voltage, fast-switching applications such as power factor correction and lighting inverters. It is packaged in a TO-220FP case with a continuous drain current rating of 8.0 A and a drain-source voltage rating of 800 V. The device has a typical on-resistance of 1.42 Ω at 10 V gate voltage and a total gate charge of 24.45 nC. It dissipates up to 57 W and operates with a junction temperature range from -55 °C to +150 °C. Thermal resistance from junction to case is 2.19 °C/W, and from junction to ambient is 120 °C/W. The gate-source voltage is limited to 30 V, and the single pulse avalanche energy rating is 534 mJ.

Datasheet Summary
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The CDM2208-800FP is an N-channel power MOSFET designed for high-voltage, fast-switching applications such as power factor correction and lighting inverters. It is packaged in a TO-220FP case with a continuous drain current rating of 8.0 A and a drain-source voltage rating of 800 V. The device has a typical on-resistance of 1.42 Ω at 10 V gate voltage and a total gate charge of 24.45 nC. It dissipates up to 57 W and operates with a junction temperature range from -55 °C to +150 °C. Thermal resistance from junction to case is 2.19 °C/W, and from junction to ambient is 120 °C/W. The gate-source voltage is limited to 30 V, and the single pulse avalanche energy rating is 534 mJ.

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MOSFET N-Ch 8A 800V PFC FET 24.45nC 1.42Ohm 57W

MOSFET N-Ch 8A 800V PFC FET 24.45nC 1.42Ohm 57W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CDM2208-800FP SL
Product Name MOSFET
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