Central Semiconductor Corp. Single Bipolar Transistors BC212B APM TIN/LEAD

Description
50V 200MA 300MW TH TRANSISTOR-SM
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Description
50V 200MA 300MW TH TRANSISTOR-SM
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Datasheet
Datasheet Summary
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The BC212B is a silicon PNP transistor in a TO-92 package, designed for low-noise, high-gain amplifier applications. It has a collector-emitter voltage rating of 50 V, a continuous collector current of 200 mA, and a power dissipation of 300 mW. The DC current gain (hFE) ranges from 200 to 400 at VCE=5.0 V and IC=2.0 mA. The transition frequency is 200 MHz, and the noise figure is 10 dB under specified conditions. The device operates from -65°C to +150°C and has a thermal resistance of 416 °C/W. This part is RoHS compliant and includes a tin/lead plating option as specified by its ordering suffix.

Datasheet Summary
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The BC212B is a silicon PNP transistor in a TO-92 package, designed for low-noise, high-gain amplifier applications. It has a collector-emitter voltage rating of 50 V, a continuous collector current of 200 mA, and a power dissipation of 300 mW. The DC current gain (hFE) ranges from 200 to 400 at VCE=5.0 V and IC=2.0 mA. The transition frequency is 200 MHz, and the noise figure is 10 dB under specified conditions. The device operates from -65°C to +150°C and has a thermal resistance of 416 °C/W. This part is RoHS compliant and includes a tin/lead plating option as specified by its ordering suffix.

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Single Bipolar Transistors - 1514-BC212BAPMTIN/LEADTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1514-BC212BAPMTIN/LEADTB-ND
Single Bipolar Transistors 1514-BC212BAPMTIN/LEADTB-ND
50V 200MA 300MW TH TRANSISTOR-SM

50V 200MA 300MW TH TRANSISTOR-SM

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1514-BC212BAPMTIN/LEADTB-ND
Product Name Single Bipolar Transistors
Polarity PNP
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