Central Semiconductor Corp. MOSFET 2N7002 TR13

Description
MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
Description
MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
Datasheet
Datasheet Summary
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The 2N7002 is an N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It is packaged in an SOT-23 surface-mount case. The device has a drain-source voltage rating of 60 V, a continuous drain current of 115 mA at 25°C, and a power dissipation of 350 mW. The gate-source voltage is rated at 40 V. The on-state resistance is 3.7 Ω at VGS=10 V and ID=500 mA, rising to 13.5 Ω at 100°C. The thermal resistance is 357 °C/W. Operating and storage junction temperatures range from -65°C to +150°C. The part meets RoHS compliance and is marked with the code 702.

Datasheet Summary
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The 2N7002 is an N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It is packaged in an SOT-23 surface-mount case. The device has a drain-source voltage rating of 60 V, a continuous drain current of 115 mA at 25°C, and a power dissipation of 350 mW. The gate-source voltage is rated at 40 V. The on-state resistance is 3.7 Ω at VGS=10 V and ID=500 mA, rising to 13.5 Ω at 100°C. The thermal resistance is 357 °C/W. Operating and storage junction temperatures range from -65°C to +150°C. The part meets RoHS compliance and is marked with the code 702.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs

MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002 TR13
Product Name MOSFET
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