The 2N7002 is an N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It is packaged in an SOT-23 surface-mount case. The device has a drain-source voltage rating of 60 V, a continuous drain current of 115 mA at 25°C, and a power dissipation of 350 mW. The gate-source voltage is rated at 40 V. The on-state resistance is 3.7 Ω at VGS=10 V and ID=500 mA, rising to 13.5 Ω at 100°C. The thermal resistance is 357 °C/W. Operating and storage junction temperatures range from -65°C to +150°C. The part meets RoHS compliance and is marked with the code 702.
MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002 TR13 |
| Product Name | MOSFET |