The ALD1102APAL is a monolithic dual P-channel matched MOSFET pair in an 8-pin plastic DIP package, designed for precision analog applications such as current mirrors and differential amplifiers. It features a typical gate threshold voltage of -0.7 V, input impedance of 10^12 Ω, and gate leakage current of 100 pA at 25°C. The pair exhibits matched characteristics with offset voltage grades up to 10 mV and drain-source on-resistance of 180 to 270 Ω at -5 V gate bias. The device operates from 0°C to +70°C, supports up to -10 V drain-source voltage, and has a power dissipation rating of 500 mW. It is RoHS compliant and features a negative current temperature coefficient. The package dimensions conform to the standard PDIP-8 layout with a body width of 7.62 to 8.26 mm and pin pitch of 2.29 to 2.79 mm.
MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
Mosfet Array 2 P-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP
MOSFET 2P-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD1102APAL | 1014-1004-ND | ALD1102APAL |
| Product Name | Dual P-Channel Matched MOSFET Pair | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | ||
| MOSFET Operating Mode | Enhancement; Enhancement Mode | ||
| V(BR)DSS | 12 volts | ||
| IDSS | -16 milliamps |