Central Semiconductor Corp. Single Bipolar Transistors 2N5823 APM PBFREE

The 2N5823 is a PNP silicon transistor in a TO-92-18R package, designed for general purpose amplifier applications requiring high collector current. It has a maximum collector-emitter voltage of 60 V, a continuous collector current of 750 mA, and a power dissipation of 625 mW at 25°C. The transistor features a current gain (hFE) of 25 at IC=500 mA and a transition frequency of 120 MHz. Operating and storage junction temperatures range from -65°C to +150°C. The device is epoxy molded and meets RoHS compliance when ordered with the PBFREE suffix.