Central Semiconductor Corp. Bipolar Transistors - BJT 2N1131B

Description
Bipolar Transistors - BJT PNP Gen Amp/Switch 40Vceo 50Vcbo
Description
Bipolar Transistors - BJT PNP Gen Amp/Switch 40Vceo 50Vcbo
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PNP general-purpose amplifier and switch transistor in TO-39 case with a collector-emitter voltage of 50 V, collector-base voltage of 70 V, emitter-base voltage of 6.0 V, and maximum collector current of 10 mA. It has a minimum hFE of 75 at 10 mA and 10 V, a saturated collector-emitter voltage of 1.5 V at 10 mA, and a transition frequency of 150 MHz. The device is rated for operation with a collector cutoff current of 0.10 µA at 50 V.

Datasheet Summary
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PNP general-purpose amplifier and switch transistor in TO-39 case with a collector-emitter voltage of 50 V, collector-base voltage of 70 V, emitter-base voltage of 6.0 V, and maximum collector current of 10 mA. It has a minimum hFE of 75 at 10 mA and 10 V, a saturated collector-emitter voltage of 1.5 V at 10 mA, and a transition frequency of 150 MHz. The device is rated for operation with a collector cutoff current of 0.10 µA at 50 V.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N1131B
Bipolar Transistors - BJT 2N1131B
Bipolar Transistors - BJT PNP Gen Amp/Switch 40Vceo 50Vcbo

Bipolar Transistors - BJT PNP Gen Amp/Switch 40Vceo 50Vcbo

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N1131B
Product Name Bipolar Transistors - BJT
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