Infineon Technologies AG Bipolar Transistors - BJT BC 857BL3 E6327

The BC857BL3 is a PNP silicon transistor for AF input stages and driver applications, housed in a TSLP-3-1 package. It has a maximum collector-emitter voltage of 45 V, a collector current of 100 mA, and a total power dissipation of 250 mW at junction temperatures up to 135 °C. The junction-to-solder-point thermal resistance is ≤60 K/W. It features a DC current gain (hFE) group B range of 220 to 475 at 2 mA collector current and 5 V collector-emitter voltage, a collector-emitter saturation voltage of ≤650 mV at 100 mA collector current, and a transition frequency of 250 MHz. The device is RoHS compliant but not qualified to AEC-Q101.