NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMZB670UPE,315 PMZB670UPE,315

Manufacturer: Nexperia USA Inc. Win Source Part Number: 004437-PMZB670UPE,31 5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-DFN1006B (0.6x1) Dimension: 3-XFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 680mA (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 1.14nC @ 4.5V Max Input Capacitance: 87pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 850 mOhm @ 400mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance