NXP Semiconductors 30V 67A MOSFET Transistor PH8230E

Description
MOSFET N-CH 30V 67A LFPAK Product overview: PH8230E from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 67A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PH8230E can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 30V 67A LFPAK Product overview: PH8230E from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 67A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PH8230E can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
30V 67A MOSFET Transistor
285-PH8230E
30V 67A MOSFET Transistor 285-PH8230E
MOSFET N-CH 30V 67A LFPAK Product overview: PH8230E from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 67A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PH8230E can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 67A LFPAK Product overview: PH8230E from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 67A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 67A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PH8230E can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH8230E - 061452-PH8230E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH8230E
061452-PH8230E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH8230E 061452-PH8230E
Manufacturer: Nexperia USA Inc. Win Source Part Number: 061452-PH8230E Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 1400pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 061452-PH8230E
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 1400pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-PH8230E 061452-PH8230E
Product Name 30V 67A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH8230E
Polarity N-Channel N-Channel; N-Channel
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