Richardson RFPD mmW Driver Amplifier XP1013-QD-0N00

Description
Mimix Broadband's three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 19.0 dB with a +23.0 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Request a Quote
Description
Mimix Broadband's three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 19.0 dB with a +23.0 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
mmW Driver Amplifier - XP1013-QD-0N00 - Richardson RFPD
Downers Grove, IL, United States
mmW Driver Amplifier
XP1013-QD-0N00
mmW Driver Amplifier XP1013-QD-0N00
Mimix Broadband's three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 19.0 dB with a +23.0 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Mimix Broadband's three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 19.0 dB with a +23.0 dBm saturated output power. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number XP1013-QD-0N00
Product Name mmW Driver Amplifier
Frequency Range 17000 to 26000 MHz
Unlock Full Specs
to access all available technical data

Similar Products

RF & MW LNA - CHA2110-QDG/20 - Richardson RFPD
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 7000 to 12000 MHz
Maximum Gain 19 dB
View Details
mmW Power Amplifier - ADPA7005CHIP - Richardson RFPD
Specs
Amplifier Type Power Amplifier
Frequency Range 20000 to 44000 MHz
Maximum Gain 17 dB
View Details