Richardson RFPD RF & MW Power Amplifier MMZ09332BT1

Description
The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
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Description
The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
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Suppliers

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RF & MW Power Amplifier - MMZ09332BT1 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
MMZ09332BT1
RF & MW Power Amplifier MMZ09332BT1
The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.

The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number MMZ09332BT1
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 130 to 1000 MHz
Maximum Gain 30.5 dB
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