The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili
ty transistor (pHEMT) low-noise wideband amplifier in a plastic leadless 3 mm × 3 mm surface-mount package that operates between 6 GHz and 18 GHz. The MMA044PP3 amplifier provides 17 dB of gain, 2.0 dB noise figure, 14 dBm P1dB, and 28 dBm output IP3. The amplifier draws only 100 mA of current from a 4 V supply. The P1dB power of 14 dBm enables the LNA to function as an LO driver. The RF input and output ports of the amplifier are DC blocked and internally matched to 50 Ohm. This product is also available in die format as the MMA044AA.
The MMA044PP3 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a plastic leadless 3 mm × 3 mm surface-mount package that operates between 6 GHz and 18 GHz. The MMA044PP3 amplifier provides 17 dB of gain, 2.0 dB noise figure, 14 dBm P1dB, and 28 dBm output IP3. The amplifier draws only 100 mA of current from a 4 V supply. The P1dB power of 14 dBm enables the LNA to function as an LO driver. The RF input and output ports of the amplifier are DC blocked and internally matched to 50 Ohm. This product is also available in die format as the MMA044AA.
