MMA040PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili
ty transistor (pHEMT) low-noise distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 27 GHz. It is ideal for test instrumentation and electronic warfare applications. The amplifier provides a flat gain of 16 dB, 2 dB noise figure, and 16 dBm of output power at 1 dBm gain compression while requiring only 60 mA from an 8 V supply. Output IP3 is typically 28 dBm. The MMA040PP5 amplifier features RF I/Os that are internally matched to 50 Ohm. It is also available in die form as the MMA040AA.
MMA040PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 27 GHz. It is ideal for test instrumentation and electronic warfare applications. The amplifier provides a flat gain of 16 dB, 2 dB noise figure, and 16 dBm of output power at 1 dBm gain compression while requiring only 60 mA from an 8 V supply. Output IP3 is typically 28 dBm. The MMA040PP5 amplifier features RF I/Os that are internally matched to 50 Ohm. It is also available in die form as the MMA040AA.
