Richardson RFPD RF & MW Power Amplifier ADPA7002C-KIT

Description
The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 40 dBm. The amplifier requires 600 mA from a 5 V supply on VDD2A, VDD2B, and VDD1. The ADPA7002CHIP also features inputs/outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). All data is taken with the on substrate chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils) long.
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Description
The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 40 dBm. The amplifier requires 600 mA from a 5 V supply on VDD2A, VDD2B, and VDD1. The ADPA7002CHIP also features inputs/outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). All data is taken with the on substrate chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils) long.
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RF & MW Power Amplifier - ADPA7002C-KIT - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ADPA7002C-KIT
RF & MW Power Amplifier ADPA7002C-KIT
The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 40 dBm. The amplifier requires 600 mA from a 5 V supply on VDD2A, VDD2B, and VDD1. The ADPA7002CHIP also features inputs/outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). All data is taken with the on substrate chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils) long.

The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 40 dBm. The amplifier requires 600 mA from a 5 V supply on VDD2A, VDD2B, and VDD1. The ADPA7002CHIP also features inputs/outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). All data is taken with the on substrate chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils) long.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ADPA7002C-KIT
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 20000 to 44000 MHz
Maximum Gain 17 dB
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