The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.
The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ohm, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.
The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | HMC8410LP2FE |
| Product Name | RF & MW LNA |
| Amplifier Type | Low Noise Amplifier |
| Frequency Range | 10 to 10000 MHz |
| Maximum Gain | 19.5 dB |
| Output Power | 21 dBm |
| Noise Figure | 1.1 dB |
