The GRF0030 is a 50 W (P3dB) unmatched GaN-on-SiC HEMT power transistor designed for operation from DC to 6 GHz with a 50 V drain supply. It delivers a saturated output power of 46.6 dBm, saturated gain of 12.7 dB, and saturated drain efficiency of 60%. The device is housed in a 3 x 3 mm QFN-16 surface mount package and supports both linear and pulsed applications. It is RoHS compliant and requires proper thermal via design for optimal RF and thermal performance.
The GRF0030 is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 3x3 mm surface mount QFN-16 package. Lead-free and RoHS compliant.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | GRF0030 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
