Richardson RFPD RF Power Transistor DU2880T

The DU2880T is an N-channel enhancement mode RF power MOSFET transistor designed for broadband operation from 2 to 175 MHz at 28 V supply, delivering 80 W saturated output power. It is packaged in a surface-mount case measuring 25.15 mm maximum length, 18.54 mm maximum width, and 7.49 mm maximum height, with a thermal resistance of 0.85 °C/W. The device has a drain-source breakdown voltage of 65 V, drain-source current rating of 16 A, and power dissipation of 206 W. Electrical characteristics include an input capacitance of 180 pF, output capacitance of 160 pF, reverse capacitance of 32 pF, power gain of 13 dB at 175 MHz, and drain efficiency of 60% at 175 MHz with 60 W output power. It supports a load mismatch tolerance up to 30:1 VSWR and is RoHS compliant.