D1002UK is a 40W RF silicon FET designed for HF/VHF/UHF communications from 1 MHz to 175 MHz, featuring 16 dB minimum gain and 50% drain efficiency at 28V. It is housed in a metal package measuring 24.76 mm by 18.42 mm, with a thermal resistance of 2.0°C/W and a maximum junction temperature of 200°C. The device supports a drain-source breakdown voltage of 70V, gate-source voltage of ±20V, and continuous drain current of 10A. Input, output, and reverse transfer capacitances are 120 pF, 60 pF, and 5 pF respectively at 1 MHz. It is RoHS compliant and contains a beryllium oxide ceramic component requiring careful handling.
40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | D1002UK |
| Product Name | RF Power Transistor |
| Output Power | 40 watts |
