The D1001UK is a metal gate RF silicon FET designed for amplified applications from 1 MHz to 175 MHz, featuring a minimum gain of 16 dB and drain efficiency up to 50%. It is housed in a single-ended package with dimensions of 24.76 mm by 18.42 mm and includes a metal flange for heat dissipation. The device supports a maximum drain-source voltage of 70 V, gate-source voltage of ±20 V, and continuous drain current of 5 A, with a maximum power dissipation of 50 W and junction operating temperature up to 200°C. Thermal resistance from junction to case is 3.5°C/W. Input and output capacitances are 60 pF and 30 pF respectively at 1 MHz. The component includes a beryllium oxide ceramic insulator requiring careful handling to avoid toxic dust exposure. It is RoHS compliant and gold metallised.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | D1001UK |
| Product Name | RF Power Transistor |
| Output Power | 20 watts |
