CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in a flange package. Based on appropriate external match adjustment, the CGH55015F2 is suitable for applications up to 6 GHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CGH55015F2 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
