Richardson RFPD Silicon Carbide MOSFET Modules CAB530M12BM3

Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance Design for Fast Switching with Low Power Losses Benefits Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages Reduced Cooling Requirements & Reduced System Cost Optimized Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization Reduced Cooling Requirements & Reduced System Cost Evaluation Gate Driver and Clamped Inductive Load Evaluation Kit Available to Enable Easy Laboratory Testing & System Implementation Applications Railway and Traction EV Charging Infrastructure Industrial Automation & Testing High Frequency Power Supplies Renewable Energy Systems & Grid-Tied Inverters Active Front Ends & AC Inverters