Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features
3rd generation SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Load switch
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency
Applications
- Solar inverters
- EV motor drive
- High voltage DC/DC converters
- Switched mode power supplies
- Load switch
