Richardson RFPD Silicon Carbide MOSFETs C3M0016120K

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the separate Kelvin source pin can further reduce switching losses by as much as 30% compared to the traditional 3-lead TO-247 package. Featuring the lowest available on-resistance combined with a low gate charge, the C3M0016120K is ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC/DC converters and chargers. Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar energy systems EV-Charging and EV-drive Uninterruptible power supply (UPS) High voltage DC/DC converters Switched mode power supplies Load switch Motor Control and Drives Energy storage