Richardson RFPD Silicon Carbide MOSFETs C3M0021120J2-TR

The C3M0021120J2 is a third-generation silicon carbide N-channel enhancement mode MOSFET designed for high-efficiency power conversion applications such as motor control, EV battery chargers, and high-voltage DC/DC converters. It is packaged in a TO-263-7XL format with a separate driver source pin and larger drain tab for improved thermal performance. The device has a drain-source breakdown voltage of 1200 V, a maximum continuous drain current of 83 A at 100 °C case temperature, and a drain-source on-state resistance of 21 mΩ at 25 °C and 15 V gate voltage. It features low input, output, and reverse transfer capacitances, with a thermal resistance from junction to case of 0.23 °C/W. Operating junction and storage temperatures range from -40 °C to +175 °C. The part is RoHS compliant and halogen free.