APT60M60JLL is an N-channel enhancement mode power MOSFET designed for high-voltage, high-current applications with low conduction and switching losses. It is packaged in the SOT-227 (ISOTOP®) case, measuring 31.5 mm × 11.8 mm × 4.8 mm. The device has a drain-source voltage rating of 600 V, a continuous drain current of 70 A at 25°C, and a drain-source on-state resistance of 0.060 Ω at 10 V gate voltage and 35 A. It supports a pulsed drain current of 280 A, a total gate charge of 289 nC, and a maximum junction temperature of 150°C. The device is UL recognized and meets the IEC 60286-3 standard for power semiconductor devices. The thermal resistance from junction to case is 0.18°C/W.
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Richardson RFPD | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | APT60M60JLL |
| Product Name | Power MOSFET Transistor |
| rDS(on) | 0.0600 ohms |
