Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
| Richardson RFPD | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | APT5010JVR |
| Product Name | Power MOSFET Transistor |
| rDS(on) | 0.1000 ohms |
