The AFM906NT1 is an N-channel LDMOS transistor for handheld radios operating from 136 to 941 MHz, packaged in a DFN4×6 surface-mount case with an exposed source terminal for thermal performance. The device supports up to 30 V drain-source voltage and 12.5 V operating supply, with a maximum junction temperature of 150°C and junction-to-case thermal resistance of 1.9 °C/W. It provides 6.8 W output power at 520 MHz with 70.8% efficiency under narrowband conditions and maintains performance across 440-520 MHz broadband. Integrated ESD protection meets HBM Class 1C (1000 V), MM Class A (50 V), and CDM IV (2000 V). Moisture sensitivity is rated at J-STD-020 Level 3.
Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | AFM906NT1 |
| Product Name | RF Power Transistor |
| Package Type | Plastic SMT |
