The A5G35S008N is a 27 dBm RF power GaN transistor designed for cellular base station applications in the 3300 to 3800 MHz frequency range, packaged in a DFN 4.5 × 4 mm surface-mount case with an exposed drain source terminal. It operates at a recommended drain voltage of 48 Vdc, supports a maximum channel temperature of 225 °C, and is rated for a case operating temperature range of -55 to +150 °C. The device meets ESD protection standards per Human Body Model (Class 1A) and Charge Device Model (Class C3), and has a moisture sensitivity level of 3 per JESD22-A113. It is not automotive qualified.
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | A5G35S008NT6 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
