The A2V09H400-04NR3 is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications in the 720 to 960 MHz frequency range. It is packaged in an OM-780-4L plastic case with an exposed source terminal on the backside. The device operates with a drain-source voltage up to 105 Vdc and a maximum junction temperature of 225 °C. It delivers 107 W average output power at 780 MHz with 55.8% drain efficiency and an adjacent channel power ratio of -36.4 dBc under W-CDMA single-carrier conditions. Thermal resistance from junction to case is 0.50 °C/W. The part meets ESD protection class 2 for Human Body Model and is rated Moisture Sensitivity Level 3 per JESD22-A113. It is qualified for automotive use under AEC-Q200.
This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | A2V09H400-04NR3 |
| Product Name | RF Power Transistor |
| Package Type | Plastic Flangeless |
