AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM609S

Description
60V 14A 7.2mΩ@10V,12A 2.5W 1.6V@250uA 1 N-Channel SOP-8 MOSFETs ROHS
  • Transistors - AGM609S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 14A 7.2mΩ@10V,12A 2.5W 1.6V@250uA 1 N-Channel SOP-8 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM609S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM609S
Transistors AGM609S
60V 14A 7.2mΩ@10V,12A 2.5W 1.6V@250uA 1 N-Channel SOP-8 MOSFETs ROHS

60V 14A 7.2mΩ@10V,12A 2.5W 1.6V@250uA 1 N-Channel SOP-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM609S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

- LM5107SD/NOPB - Rochester Electronics
Texas Instruments
LM5107SD/NOPB
Specs
Transistor Type MOSFET
Package Type WSON8
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-40W/A2,115 - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-40W/A2,115
Specs
Transistor Type BJT
Package Type SC-70
View Details
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor - TGF2819-FL - Qorvo
Qorvo
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
TGF2819-FL
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2N3904TF - 854966-2N3904TF - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N3904TF
2N3904TF
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details