AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM609AP

Description
60V 40A 25W 6.5mΩ@10V,20A 1.7V@250uA 1 N-Channel DFN3x3 MOSFETs ROHS
  • Transistors - AGM609AP - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 40A 25W 6.5mΩ@10V,20A 1.7V@250uA 1 N-Channel DFN3x3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM609AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM609AP
Transistors AGM609AP
60V 40A 25W 6.5mΩ@10V,20A 1.7V@250uA 1 N-Channel DFN3x3 MOSFETs ROHS

60V 40A 25W 6.5mΩ@10V,20A 1.7V@250uA 1 N-Channel DFN3x3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM609AP
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 25543925 - Radwell International
Fuji Electric Corp. of America
Transistor
ET391
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1610-T1-A - 855049-2SA1610-T1-A - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1610-T1-A
2SA1610-T1-A
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor - T2G4005528-FS - Qorvo
Qorvo
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor
T2G4005528-FS
Specs
Transistor Technology / Material GaN
Package Type NI-360
View Details
3 suppliers