AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM210MAP

Description
20V 25A 35W 11mΩ@4.5V,4A 700mV@250uA 1 N-Channel + 1 P-Channel DFN3.3x3.3 MOSFETs ROHS
  • Transistors - AGM210MAP - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
20V 25A 35W 11mΩ@4.5V,4A 700mV@250uA 1 N-Channel + 1 P-Channel DFN3.3x3.3 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM210MAP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM210MAP
Transistors AGM210MAP
20V 25A 35W 11mΩ@4.5V,4A 700mV@250uA 1 N-Channel + 1 P-Channel DFN3.3x3.3 MOSFETs ROHS

20V 25A 35W 11mΩ@4.5V,4A 700mV@250uA 1 N-Channel + 1 P-Channel DFN3.3x3.3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM210MAP
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TEXAS INSTRUMENTS - OPA380AID - TRANS IMPEDANCE AMPLIFIER, 90MHZ, SOIC-8 - 815-OPA380AID - Utmel Electronic Limited
Texas Instruments
TEXAS INSTRUMENTS - OPA380AID - TRANS IMPEDANCE AMPLIFIER, 90MHZ, SOIC-8
OPA380AID
View Details
Bipolar Transistors - 7258512 - RS Components, Ltd.
Nexperia B.V.
Bipolar Transistors
BC807-40W
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT323; Sot-323 (sc-70)
View Details
3 suppliers
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FL - Qorvo
Qorvo
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
T1G4020036-FL
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Package Type NI-650 Flanged
Transistor Grade / Operating Range Military
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E - 855067-2SA2014-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E
2SA2014-TD-E
Specs
Package Type SOT3
View Details