The ALD210800APCL is a quad precision N-channel EPAD® MOSFET array with Zero Threshold™ voltage (VGS(th) = 0.00V ±0.01V), designed for ultra-low voltage and nanopower analog applications. It operates from +0.05V to +5V with subthreshold currents below 1nA and a minimum operating power of 1nW. The device features a low RDS(ON) of 25Ω at VGS = +5.0V, drain-source on current exceeding 50mA, and gate threshold voltage mismatch to 2mV max. It is packaged in a 16-pin plastic DIP and maintains tight parametric matching across temperature and production batches, with a temperature coefficient of gate threshold voltage ranging from -1.6mV/°C to +1.6mV/°C. The part meets RoHS lead-free standards and is rated for 0°C to +70°C operating temperature with a maximum drain-source voltage of 10V and 500mW power dissipation.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY
MOSFET 4N-CH 10.6V 0.08A 16DIP
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD210800APCL | 1014-1216-ND | ALD210800APCL | ALD210800APCL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Precision Zero Threshold | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 70 milliamps |
