Advanced Linear Devices, Inc. DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY ALD111933PAL

Description
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
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Description
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
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Datasheet
Datasheet Summary
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The ALD111933PAL is a dual N-channel enhancement mode matched pair MOSFET array in an 8-pin plastic DIP package, designed for precision low-power analog applications such as current mirrors and differential amplifiers. It features a precision threshold voltage of +3.30V with a maximum offset voltage of 20mV between the matched devices, and a negative temperature coefficient of -1.7 mV/°C for the threshold voltage. The device operates from 0°C to +70°C, with a drain-source voltage rating of 10.6V and a maximum power dissipation of 500mW. Both MOSFETs exhibit low input capacitance, low gate and drain leakage currents, and fast switching speeds with 10ns turn-on and turn-off delays. The pins are configured for connection of both sources to the most negative supply potential, with internally connected IC pins.

Datasheet Summary
Powered by GS/AI

The ALD111933PAL is a dual N-channel enhancement mode matched pair MOSFET array in an 8-pin plastic DIP package, designed for precision low-power analog applications such as current mirrors and differential amplifiers. It features a precision threshold voltage of +3.30V with a maximum offset voltage of 20mV between the matched devices, and a negative temperature coefficient of -1.7 mV/°C for the threshold voltage. The device operates from 0°C to +70°C, with a drain-source voltage rating of 10.6V and a maximum power dissipation of 500mW. Both MOSFETs exhibit low input capacitance, low gate and drain leakage currents, and fast switching speeds with 10ns turn-on and turn-off delays. The pins are configured for connection of both sources to the most negative supply potential, with internally connected IC pins.

Suppliers

Company
Product
Description
Supplier Links
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY - ALD111933PAL - Advanced Linear Devices, Inc.
Sunnyvale, CA, United States
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY
ALD111933PAL
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY ALD111933PAL
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP

Supplier's Site Datasheet
FET, MOSFET Arrays - 1014-1051-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1014-1051-ND
FET, MOSFET Arrays 1014-1051-ND
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP

Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD111933PAL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ALD111933PAL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ALD111933PAL
MOSFET 2N-CH 10.6V 8DIP

MOSFET 2N-CH 10.6V 8DIP

Supplier's Site

Technical Specifications

  Advanced Linear Devices, Inc. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number ALD111933PAL 1014-1051-ND ALD111933PAL
Product Name DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Enhancement Mode
V(BR)DSS 10 volts
IDSS 3 milliamps
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