ALD110908SAL is a dual monolithic enhancement mode N-channel MOSFET array in an 8-pin SOIC package, designed for precision analog applications such as current mirrors and differential amplifiers. The devices feature a matched gate threshold voltage of 0.80V ±0.02V, a typical input impedance of 10¹²Ω, and a DC current gain exceeding 10⁸. They exhibit a VGS(th) match tighter than 2mV and a gate leakage current of 3pA at 25°C. The package dimensions are 4.69mm to 5.00mm in length and 3.50mm to 4.05mm in width, with a 1.27mm pin pitch. The operating temperature range is 0°C to +70°C. The device supports operation from +1.0V to +10V and meets RoHS standards with lead-free terminations. It includes the EPAD® CMOS technology for matched performance and temperature tracking across the on-chip pairs.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
MOSFET 2N-CH 10.6V 8SOIC
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110908SAL | 1014-1041-ND | ALD110908SAL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
