The ALD110808APCL is a quad N-channel enhancement-mode MOSFET array in a 16-pin plastic DIP package, designed for precision analog applications such as current mirrors and differential amplifiers. The devices feature matched gate threshold voltages of 0.80V with a match of ±2mV, input impedance of 10¹²Ω, and gate leakage current of 30pA at 25°C. They operate from 0°C to +70°C, with a drain-source breakdown voltage of 10V and power dissipation of 500mW. The array exhibits thermal tracking and low input capacitance of 2.5pF, with on-resistance of 500Ω at VGS=4.8V and drain-source on current of 12mA at VGS=10.3V. It meets RoHS lead-free standards.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
MOSFET 4N-CH 10.6V 16DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110808APCL | 1014-1024-ND | ALD110808APCL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
