Qorvo 1200 V, 70 mohm SiC FET UJ3C120070K4S

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1200 V, 70 mohm SiC FET - UJ3C120070K4S - Qorvo
Greensboro, NC, United States
1200 V, 70 mohm SiC FET
UJ3C120070K4S
1200 V, 70 mohm SiC FET UJ3C120070K4S
Qorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Qorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number UJ3C120070K4S
Product Name 1200 V, 70 mohm SiC FET
Transistor Technology / Material 1200 V, 70 mohm SiC FET
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