Qorvo 1200 V, 23 mohm SiC FET UF4SC120023B7S

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1200 V, 23 mohm SiC FET - UF4SC120023B7S - Qorvo
Greensboro, NC, United States
1200 V, 23 mohm SiC FET
UF4SC120023B7S
1200 V, 23 mohm SiC FET UF4SC120023B7S
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number UF4SC120023B7S
Product Name 1200 V, 23 mohm SiC FET
Transistor Technology / Material 1200 V, 23 mohm SiC FET
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