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Qorvo DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor TGF2819-FS

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DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor - TGF2819-FS - Qorvo
Greensboro, NC, United States
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
TGF2819-FS
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor TGF2819-FS
The Qorvo TGF2819-FS is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request.

The Qorvo TGF2819-FS is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number TGF2819-FS
Product Name DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
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