Qorvo 300W, 1-1.5 GHz, GaN on SiC RF Transistor QPD2560L

Description
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.
  • 300W, 1-1.5 GHz, GaN on SiC RF Transistor - QPD2560L - Qorvo
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Description
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.
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300W, 1-1.5 GHz, GaN on SiC RF Transistor - QPD2560L - Qorvo
Qorvo
Greensboro, NC, United States
300W, 1-1.5 GHz, GaN on SiC RF Transistor
QPD2560L
300W, 1-1.5 GHz, GaN on SiC RF Transistor QPD2560L
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.

The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD2560L
Product Name 300W, 1-1.5 GHz, GaN on SiC RF Transistor
Transistor Technology / Material 300W, 1-1.5 GHz, GaN on SiC RF Transistor
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