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Qorvo DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor TGF2977-SM

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DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor - TGF2977-SM - Qorvo
Greensboro, NC, United States
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor
TGF2977-SM
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor TGF2977-SM
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
TGF2977-SM
RF JFET Transistors TGF2977-SM
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

Supplier's Site Datasheet

Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number TGF2977-SM TGF2977-SM
Product Name DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor RF JFET Transistors
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
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