Qorvo DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor TGF2977-SM

Description
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
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Description
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor - TGF2977-SM - Qorvo
Greensboro, NC, United States
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor
TGF2977-SM
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor TGF2977-SM
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-TGF2977-SM-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-TGF2977-SM-ND
RF FETs, MOSFETs 2312-TGF2977-SM-ND
DC-12 GHZ, 5W, 32V GAN RF TR

DC-12 GHZ, 5W, 32V GAN RF TR

Buy Now Datasheet
Transistors - TGF2977-SM - ODG (Origin Data Global)
Shenzhen, China
Transistors
TGF2977-SM
Transistors TGF2977-SM
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
TGF2977-SM
RF JFET Transistors TGF2977-SM
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

Buy Now Datasheet

Technical Specifications

  Qorvo DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors Transistors
Product Number TGF2977-SM 2312-TGF2977-SM-ND TGF2977-SM TGF2977-SM
Product Name DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor RF FETs, MOSFETs Transistors RF JFET Transistors
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN 16-VFQFN Exposed Pad
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