Qorvo DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor TGF2977-SM

Description
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet
Description
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor - TGF2977-SM - Qorvo
Greensboro, NC, United States
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor
TGF2977-SM
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor TGF2977-SM
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-TGF2977-SM-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-TGF2977-SM-ND
RF FETs, MOSFETs 2312-TGF2977-SM-ND
DC-12 GHZ, 5W, 32V GAN RF TR

DC-12 GHZ, 5W, 32V GAN RF TR

Buy Now Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
TGF2977-SM
RF JFET Transistors TGF2977-SM
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

Buy Now Datasheet
Transistors - TGF2977-SM - ODG (Origin Data Global)
Shenzhen, China
Transistors
TGF2977-SM
Transistors TGF2977-SM
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

Supplier's Site Datasheet

Technical Specifications

  Qorvo DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category RF Transistors Transistors Transistors Transistors
Product Number TGF2977-SM 2312-TGF2977-SM-ND TGF2977-SM TGF2977-SM
Product Name DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor RF FETs, MOSFETs RF JFET Transistors Transistors
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN 16-VFQFN Exposed Pad
Unlock Full Specs
to access all available technical data

Similar Products

DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor - TGF2933 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type die
View Details
2 suppliers
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor - TGF3020-SM - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
View Details
4 suppliers
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-10 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
View Details
4 suppliers
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3C120150B7S - Shenzhen Shengyu Electronics Technology Limited
Specs
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
View Details