The QPD1019 is a 500 W GaN on SiC HEMT RF transistor internally matched to 50 Ω for operation from 2.9 to 3.3 GHz at a 50 V supply, designed for military and civilian radar systems. It is housed in an air cavity package measuring 17.40 x 24.00 x 4.31 mm. The device delivers 590 W output power at 3.1 GHz with 15.5 dB linear gain and 69% drain efficiency under pulsed conditions, and supports pulse widths up to 100 µs at 10% duty cycle. It features a low thermal resistance of 0.19 °C/W and is RoHS compliant with MSL3 moisture sensitivity rating. The part is ESD classified as HBM Class 1C and CDM Class C3, and is rated for operation from −40 °C to +85 °C.
GaN FETs 2.9-3.3 GHz, 500W, 50V, GaN RF IMFET Product overview: QPD1019 from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3 GHz, 500W, 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.3 GHz, 500W, 50V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-QPD1019 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-QPD1019 |
| Product Name | 3.3 GHz 500W 50V MOSFET Transistor |
| Polarity | N-Channel |
