The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over-molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.
The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
GaN FETs DC-2.7 GHz, 150W, 65V GaN RF Tr Product overview: QPD1013 from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.7 GHz, 150W, 65V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.7 GHz, 150W, 65V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-QPD1013 can be used for catalog matching and distributor lookup.
| Qorvo | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QPD1013 | 278-QPD1013 |
| Product Name | DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor | 2.7 GHz 150W 65V MOSFET Transistor |
| Transistor Technology / Material | DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor | |
| Transistor Grade / Operating Range | Military | |
| Package Type | DFN | Reel |
