Qorvo 1 - 8 GHz, 10 Watt GaN Power Amplifier QPA1003D

Description
Qorvo's QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 - 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. The QPA1003D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
Request a Quote Datasheet
Description
Qorvo's QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 - 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. The QPA1003D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1 - 8 GHz, 10 Watt GaN Power Amplifier - QPA1003D - Qorvo
Greensboro, NC, United States
1 - 8 GHz, 10 Watt GaN Power Amplifier
QPA1003D
1 - 8 GHz, 10 Watt GaN Power Amplifier QPA1003D
Qorvo's QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 - 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. The QPA1003D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 - 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.

The QPA1003D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands.

The QPA1003D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.

Lead-free and RoHS compliant. Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
RF Amplifiers - 2312-QPA1003D-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
2312-QPA1003D-ND
RF Amplifiers 2312-QPA1003D-ND
1-8 GHZ, 10 W GAN PA

1-8 GHZ, 10 W GAN PA

Buy Now Datasheet

Technical Specifications

  Qorvo DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number QPA1003D 2312-QPA1003D-ND
Product Name 1 - 8 GHz, 10 Watt GaN Power Amplifier RF Amplifiers
Amplifier Type Power Amplifier Low Noise Amplifier; Power Amplifier
Applications Military / Defense; Radar Systems Radar
RoHS Compliant RoHS
Frequency Range 1000 to 8000 MHz 1000 to 8000 MHz
Minimum Gain 30 dB 31 dB
Unlock Full Specs
to access all available technical data

Similar Products

Specs
Applications RF Microwave
Frequency Range 0.0 to 6000 MHz
Minimum Gain 19.3 to 21.3 dB
View Details
RF Amplifiers - 2312-QPL7420TR7TR-ND - DigiKey
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Applications CATV
Frequency Range 5 to 1800 MHz
View Details
RF Amplifiers - 2312-QPA0022TR7TR-ND - DigiKey
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Applications General Purpose
Frequency Range 6000 to 18000 MHz
View Details
RF Amplifiers - 2312-QPA9127TR7TR-ND - DigiKey
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Applications General Purpose
Frequency Range 1000 to 6000 MHz
View Details