Nexperia B.V. N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56 BUK7Y3R1-80MX

Description
Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSon capability, housed in a LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Trench 14 split-gate technology: Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint Fast and efficient switching with optimal damping and low spiking LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joints LFPAK copper clip technology: Improved reliability, with reduced Rth, RDSon and package inductance Increases maximum current capability and improved current spreading Applications 12 V, 24 V and 48 V automotive systems Motor, lighting and solenoid control Ultra high-performance power switching
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N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56 - BUK7Y3R1-80MX - Nexperia B.V.
Nijmegen, Netherlands
N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56
BUK7Y3R1-80MX
N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56 BUK7Y3R1-80MX
Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSon capability, housed in a LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Trench 14 split-gate technology: Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint Fast and efficient switching with optimal damping and low spiking LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joints LFPAK copper clip technology: Improved reliability, with reduced Rth, RDSon and package inductance Increases maximum current capability and improved current spreading Applications 12 V, 24 V and 48 V automotive systems Motor, lighting and solenoid control Ultra high-performance power switching

Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSon capability, housed in a LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Features and benefits

  • Fully automotive qualified to AEC-Q101:
    • 175 °C rating suitable for thermally demanding environments
  • Trench 14 split-gate technology:
    • Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint
    • Fast and efficient switching with optimal damping and low spiking
  • LFPAK Gull Wing leads:
    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joints
  • LFPAK copper clip technology:
    • Improved reliability, with reduced Rth, RDSon and package inductance
    • Increases maximum current capability and improved current spreading

Applications

  • 12 V, 24 V and 48 V automotive systems
  • Motor, lighting and solenoid control
  • Ultra high-performance power switching
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK7Y3R1-80MX
Product Name N-channel 80 V, 3.1 mOhm, Standard level MOSFET in LFPAK56
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 80 volts
IDSS 160000 milliamps
VGS(off) 3 volts
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