The Nexperia BUK4D16-20 is an N-channel enhancement mode MOSFET designed for medium power applications, housed in a DFN2020MD-6 package. It features a maximum drain-source voltage of 20V and a continuous drain current rating of up to 26A at a gate-source voltage of 4.5V. The device is AEC-Q101 qualified, making it suitable for automotive applications. It has a low on-state resistance of 13 to 16 mOc at 4.5V gate drive, which contributes to efficient performance in switching circuits, DC to DC conversion, and as a low-side load switch. The MOSFET operates over an extended temperature range of -55¬8C to 175¬8C and includes ESD protection greater than 2 kV HBM. The package is designed with side wettable flanks for optical solder inspection, enhancing assembly reliability.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
MOSFET, AEC-Q101, N-CH, 20V, DFN2020MD ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK4D16-20X | 1727-BUK4D16-20XTR-ND | BUK4D16-20X | BUK4D16-20X | 82AH4499 |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 20V, Dfn2020Md Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 20 volts | 20 volts | |||
| IDSS | 26000 milliamps | 8500 milliamps | |||
| VGS(off) | 12 volts | ||||
| PD | 19 milliwatts | 2000 milliwatts |
