The Nexperia BUK4D16-20 is an N-channel enhancement mode MOSFET designed for medium power applications, housed in a DFN2020MD-6 package. It features a maximum drain-source voltage of 20V and a continuous drain current rating of up to 26A at a gate-source voltage of 4.5V. The device is AEC-Q101 qualified, making it suitable for automotive applications. It has a low on-state resistance of 13 to 16 mOc at 4.5V gate drive, which contributes to efficient performance in switching circuits, DC to DC conversion, and as a low-side load switch. The MOSFET operates over an extended temperature range of -55¬8C to 175¬8C and includes ESD protection greater than 2 kV HBM. The package is designed with side wettable flanks for optical solder inspection, enhancing assembly reliability.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
MOSFET, AEC-Q101, N-CH, 20V, DFN2020MD ROHS COMPLIANT: YES
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK4D16-20X | 1727-BUK4D16-20XTR-ND | 82AH4499 | BUK4D16-20X | BUK4D16-20X |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 20V, Dfn2020Md Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 20 volts | 20 volts | |||
| IDSS | 26000 milliamps | 8500 milliamps | |||
| VGS(off) | 12 volts | ||||
| PD | 19 milliwatts | 2000 milliwatts |
