Nexperia B.V. 65 V, 100 mA PNP/PNP general-purpose transistor BC856S,115

Description
PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors Applications General-purpose switching and amplification
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Description
PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors Applications General-purpose switching and amplification
Request a Quote
Datasheet
Datasheet Summary
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PNP/PNP general-purpose transistor pair in a TSSOP6 (SOT363-3) surface-mounted plastic package, rated for a collector-emitter voltage of -65 V and a collector current of -100 mA per transistor, with a DC current gain of at least 110 at -5 V and -2 mA. The device has a total power dissipation of up to 400 mW under optimal mounting conditions, a junction temperature rating of 150 °C, and operates from -65 °C to 150 °C ambient temperature. It features low collector capacitance (2.5 pF) and collector-emitter saturation voltage (300 mV max), with closely matched current gain and no mutual interference between the two transistors.

Datasheet Summary
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PNP/PNP general-purpose transistor pair in a TSSOP6 (SOT363-3) surface-mounted plastic package, rated for a collector-emitter voltage of -65 V and a collector current of -100 mA per transistor, with a DC current gain of at least 110 at -5 V and -2 mA. The device has a total power dissipation of up to 400 mW under optimal mounting conditions, a junction temperature rating of 150 °C, and operates from -65 °C to 150 °C ambient temperature. It features low collector capacitance (2.5 pF) and collector-emitter saturation voltage (300 mV max), with closely matched current gain and no mutual interference between the two transistors.

Suppliers

Company
Product
Description
Supplier Links
65 V, 100 mA PNP/PNP general-purpose transistor - BC856S,115 - Nexperia B.V.
Nijmegen, Netherlands
65 V, 100 mA PNP/PNP general-purpose transistor
BC856S,115
65 V, 100 mA PNP/PNP general-purpose transistor BC856S,115
PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors Applications General-purpose switching and amplification

PNP/PNP general-purpose transistor pair in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low collector capacitance
  • Low collector-emitter saturation voltage
  • Closely matched current gain
  • Reduces number of components and board space
  • No mutual interference between the transistors

Applications

  • General-purpose switching and amplification
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - BC856S,115 - 1022491-BC856S,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - BC856S,115
1022491-BC856S,115
TRANSISTORS - Transistors (BJT) - Arrays - BC856S,115 1022491-BC856S,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1022491-BC856S,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSSOP, SC-88 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Max Vce (sat): 300mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 110 @ 2mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1022491-BC856S,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-TSSOP, SC-88
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 300mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 110 @ 2mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - BC856S,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-4864-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-4864-6-ND
Bipolar Transistor Arrays 1727-4864-6-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

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Bipolar Transistor Arrays - 1727-4864-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
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Bipolar Transistor Arrays 1727-4864-2-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-4864-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-4864-1-ND
Bipolar Transistor Arrays 1727-4864-1-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Singapore, Singapore
65 V 100 mA TSSOP Bipolar Transistor
277-BC856S,115
65 V 100 mA TSSOP Bipolar Transistor 277-BC856S,115
BC856S - 65 V, 100 mA PNP/PNP general-purpose transistor TSSOP 6-Pin Product overview: BC856S,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65 V, 100 mA, TSSOP. Search-friendly keywords include transistor, BJT, switching, amplification, 65 V, 100 mA, TSSOP, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC856S,115 can be used for catalog matching and distributor lookup.

BC856S - 65 V, 100 mA PNP/PNP general-purpose transistor TSSOP 6-Pin Product overview: BC856S,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65 V, 100 mA, TSSOP. Search-friendly keywords include transistor, BJT, switching, amplification, 65 V, 100 mA, TSSOP, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC856S,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistors - 2194312 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
2194312
Bipolar Transistors 2194312
Bipolar Transistors - BJT,BC856S,115

Bipolar Transistors - BJT,BC856S,115

Supplier's Site
Bipolar Transistors - 2194311 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
2194311
Bipolar Transistors 2194311
Bipolar Transistors - BJT,BC856S,115

Bipolar Transistors - BJT,BC856S,115

Supplier's Site
Bipolar Transistors - 2194312P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
2194312P
Bipolar Transistors 2194312P
Bipolar Transistors - BJT,BC856S,115

Bipolar Transistors - BJT,BC856S,115

Supplier's Site
Bipolar Transistor Arrays - BC856S,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
BC856S,115
Bipolar Transistor Arrays BC856S,115
TRANS 2PNP 65V 0.1A 6TSSOP

TRANS 2PNP 65V 0.1A 6TSSOP

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC856S,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC856S,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC856S,115
TRANS 2PNP 65V 0.1A 6TSSOP

TRANS 2PNP 65V 0.1A 6TSSOP

Supplier's Site
Bipolar (Bjt) Array Transistor, General Purpose, Dual Pnp, -65 V, 220 Mw, -100 Ma, 110, Sot-363 Rohs Compliant Nexperia - 93X3924 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Array Transistor, General Purpose, Dual Pnp, -65 V, 220 Mw, -100 Ma, 110, Sot-363 Rohs Compliant Nexperia
93X3924
Bipolar (Bjt) Array Transistor, General Purpose, Dual Pnp, -65 V, 220 Mw, -100 Ma, 110, Sot-363 Rohs Compliant Nexperia 93X3924
Bipolar (BJT) Array Transistor, GENERAL PURPOSE, Dual PNP, -65 V, 220 mW, -100 mA, 110, SOT-363 RoHS Compliant: Yes

Bipolar (BJT) Array Transistor, GENERAL PURPOSE, Dual PNP, -65 V, 220 mW, -100 mA, 110, SOT-363 RoHS Compliant: Yes

Supplier's Site
Trans, Dual Pnp, -65V, 150Deg C, 0.22W; Transistor Polarity Nexperia - 87W9082 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Pnp, -65V, 150Deg C, 0.22W; Transistor Polarity Nexperia
87W9082
Trans, Dual Pnp, -65V, 150Deg C, 0.22W; Transistor Polarity Nexperia 87W9082
TRANS, DUAL PNP, -65V, 150DEG C, 0.22W; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:-100mA; Power Dissipation Pd:220mW; DC Current Gain hFE:110hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANS, DUAL PNP, -65V, 150DEG C, 0.22W; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:-100mA; Power Dissipation Pd:220mW; DC Current Gain hFE:110hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number BC856S,115 1022491-BC856S,115 BC856S,115 1727-4864-6-ND 277-BC856S,115 2194312 BC856S,115 BC856S,115 93X3924 87W9082
Product Name 65 V, 100 mA PNP/PNP general-purpose transistor TRANSISTORS - Transistors (BJT) - Arrays - BC856S,115 Bipolar Transistor Arrays 65 V 100 mA TSSOP Bipolar Transistor Bipolar Transistors Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar (Bjt) Array Transistor, General Purpose, Dual Pnp, -65 V, 220 Mw, -100 Ma, 110, Sot-363 Rohs Compliant Nexperia Trans, Dual Pnp, -65V, 150Deg C, 0.22W; Transistor Polarity Nexperia
Package Type SOT363-3 SOT363-3 SOT3; 6-TSSOP, SC-88 SOT363 6-TSSOP, SC-88, SOT-363 SOT-363 6-TSSOP, SC-88, SOT-363 AEC-Q101 TO-3; SOT3 TO-3
IC(max) -100 milliamps 100 milliamps 100 milliamps
VCEO -65 volts 65 volts 65 volts
PD 220 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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