PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm, with an exposed heatsink for enhanced thermal and electrical conductivity. Rated for a collector-emitter voltage of -80 V and a continuous collector current of -1 A, with a peak collector current of -2 A for pulses up to 1 ms. The device is qualified according to AEC-Q101 and suitable for automotive applications. Total power dissipation reaches up to 1.65 W with a 4-layer PCB and 1 cm² collector pad. Junction temperature range is from -55 °C to 150 °C.
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.
Features and benefits
Applications
TRANS PNP 80V 1A 3HUSON
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | BC53PA-QX | 1727-BC53PA-QXTR-ND |
| Product Name | 80 V, 1 A PNP medium power transistors | Single Bipolar Transistors |
| Package Type | SOT1061 SOT1061 | 3-PowerUDFN |
